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| Inchange Semiconductor Product SpecificationI Silicon NPN Power Transistors 2SC3569 DESCRIPTION *With TO-220F package *Low collector saturation voltage APPLICATIONS *High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 2 4 1 15 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.5A; IB=0.1A;L=1mH IC=0.5 A;IB=0.1A IC=0.5 A;IB=0.1A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 10 MIN 400 TYP. 2SC3569 MAX UNIT V 1.0 1.2 10 10 80 V V A A Switching times ton ts tf Turn-on time Storage time Fall time IC=0.5A;RL=300 IB1=- IB2=0.1A VCC=150V 1.0 2.5 1.0 s s s hFE-1 classifications R 20-40 O 30-60 Y 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3569 Fig.2 Outline dimensions 3 |
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